hamamatsu S3204-08 Large photosensitive area Si PIN photodiodes

$490.00

Features – Sensitivity matching with BGO and CsI(TI) scintillators – Low capacitance – High-speed response – High stability – Good energy resolution Specifications Photosensitive area 18 × 18 mm Package Ceramic Package category — Cooling Non-cooled Reverse voltage (max.) 100 V Spectral response range 340 to 1100 nm Peak sensitivity wavelength (typ.) 960 nm…

Description

Features
– Sensitivity matching with BGO and CsI(TI) scintillators
– Low capacitance
– High-speed response
– High stability
– Good energy resolution

Specifications

Photosensitive area	18 × 18 mm
Package	Ceramic
Package category	—
Cooling	Non-cooled
Reverse voltage (max.)	100 V
Spectral response range	340 to 1100 nm
Peak sensitivity wavelength (typ.)	960 nm
Photosensitivity (typ.)	0.66 A/W
Dark current (max.)	20000 pA
Cutoff frequency (typ.)	20 MHz
Terminal capacitance (typ.)	130 pF
Noise equivalent power (typ.)	6.6×10^-14 W/Hz^1/2
Measurement condition	Ta=25 ℃, Typ., unless otherwise noted, Photosensitivity: λ=λp, Dark current: V_R=70 V, Cutoff frequency: V_R=70 V, Terminal capacitance: V_R=70 V, f=1 MHz, Noise equivalent power: V_R=70 V