Description
Photodiode S1227-33BR – Hamamatsu Ceramic Silicon p. diode from 190 to 1000 nm
For UV to visible, precision photometry; suppressed IR sensitivity
Features
?C Resin potting type
?C Suppressed IR sensitivity
?C Low dark current
Photodiode S1227-33BR – Hamamatsu Ceramic Silicon p. diode from 190 to 1000 nm For UV to visible, precision photometry; suppressed IR sensitivity Features ?C Resin potting type ?C Suppressed IR sensitivity ?C Low dark current
Photodiode S1227-33BR – Hamamatsu Ceramic Silicon p. diode from 190 to 1000 nm
For UV to visible, precision photometry; suppressed IR sensitivity
Features
?C Resin potting type
?C Suppressed IR sensitivity
?C Low dark current
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